MRF7S35015HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
02052510
15
30
35
0.1
1000
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
Ciss
0.1
10
1
TC
=25°C
10
1
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 4. DC Safe Operating Area
I
D
, DRAIN CURRENT (AMPS)
10
1
Coss
Crss
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
100
TJ
= 200°C
TJ
= 150°C
TJ
= 175°C
17
2
10
10
16.5
16
50
30
25
20
Pout, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
η
D,
DRAIN EFFICIENCY (%)
13
30
38
47
21
46
45
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Output Power versus
Input Power
44
43
42
41
22 28 2923 24 25 26 27 30
P
out
, OUTPUT POWER (dBm) PULSED
P3dB = 43 dBm (19.8 W)
Actual
Ideal
P2dB = 42.7 dBm (19 W)
13
20
1
17
16
Pout, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Power Gain versus
Output Power
G
ps
, POWER GAIN (dB)
10
15
IDQ
= 300 mA
30
50 mA
Figure 8. Pulsed Power Gain versus
Output Power
Pout, OUTPUT POWER (WATTS) PULSED
G
ps
, POWER GAIN (dB)
VDD
=24V
10
17
1
11
16
26 V
15
10 30
40
15
14
150 mA
100 mA
14
13
12
VDD
=32Vdc,IDQ
=50mA
Pulse Width = 100
μsec
Duty Cycle = 20%
IDQ
= 50 mA, f = 3500 MHz
Pulse Width = 100
μsec
Duty Cycle = 20%
VDD
=32Vdc,IDQ
= 50 mA, f = 3500 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
VDD
= 32 Vdc, f = 3500 MHz
Pulse Width = 100
μsec, Duty Cycle = 20%
100
14
15
Gps
f = 3500 MHz
ηD
3300 MHz
3100 MHz
P1dB = 42.2 dBm (16.7 W)
28 V
30 V
32 V
15.5
14.5
13.5
35
3500 MHz
40
3300 MHz
45
3100 MHz
39
18
19
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